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STM32H563MI bảng dữ liệu(PDF) 141 Page - STMicroelectronics

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STM32H563MI bảng dữ liệu(HTML) 141 Page - STMicroelectronics

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DS14258 Rev 5
141/270
STM32H562xx and STM32H563xx
Electrical characteristics
238
v
Table 35. Typical and maximum current consumption in Stop mode
Symbol
Parameter
Conditions
Typ
LDO
Typ
SMPS
Max(1) (2)
Unit
TJ =
25 °C
TJ =
85 °C
TJ =
105 °C
TJ =
130 °C
IDD(stop)
Supply current
in Stop
Flash memory in
low power mode,
SRAMs ON
SVOS3
0.37
0.09
2.00 13.98 24.00
44.39
mA
SVOS4
0.27
0.07
1.40 10.48 18.37
34.76
SVOS5
0.19
0.06
0.86
7.08
12.88
25.31
Flash memory in
normal mode,
SRAMs ON
SVOS3
0.38
0.10
2.02 14.01 24.06
44.55
SVOS4
0.29
0.09
1.42 10.52 18.46
34.88
Flash memory in
low power mode,
SRAMs OFF except
SRAM2 16 Kbytes ON
SVOS3
0.34
0.09
1.93 13.28 22.75
41.99
SVOS4
0.25
0.07
1.35
9.87
17.33
32.65
SVOS5
0.17
0.05
0.81
6.46
11.68
22.86
Flash memory in
low power mode,
SRAMs OFF except
SRAM2 ON
SVOS3
0.35
0.10
1.95 13.45 23.02
42.52
SVOS4
0.26
0.08
1.36 10.01 17.52
33.10
SVOS5
0.17
0.08
0.82
6.59
11.92
23.37
1. Evaluated by characterization - Not tested in production.
2. The maximum values are given for LDO regulator ON. Refer to Section 5.3.3 for the SMPS maximum current consumption.
Table 36. Typical and maximum current consumption in Standby mode
Symbol
Parameter
Conditions
Typ(1)
Max(1)
Unit
Backup
RAM
RTC and
LSE(2)
1.8 V 2.4 V
3 V
3.3 V
TJ =
25 °C
TJ =
85 °C
TJ =
105 °C
TJ =
130 °C
IDD(standby)
Supply
current in
standby
mode,
IWDG OFF
OFF
OFF
2.58
2.78
3.01
3.19
5.9
11.7
21.2
53
μA
ON
OFF
3.79
4.05
4.38
4.63
8.2
21.0
37.0
90
OFF
ON
2.91
3.15
3.47
3.67
6.9
12.9
22.5
55
ON
ON
4.16
4.46
4.85
5.12
9.2
22.2
38.3
92
1. Evaluated by characterization - Not tested in production.
2. LSE is in medium-low drive mode.



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