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STM32H563II bảng dữ liệu(PDF) 153 Page - STMicroelectronics |
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STM32H563II bảng dữ liệu(HTML) 153 Page - STMicroelectronics |
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153 / 270 page ![]() DS14258 Rev 5 153/270 STM32H562xx and STM32H563xx Electrical characteristics 238 4 MHz low-power internal RC oscillator (CSI) ∆VDD(HSI) Frequency drift with VDD (reference is 3.3 V) VDD= 1.71 to 3.6 V -0.12 - 0.03 % ∆TEMP(HSI) Frequency drift with VDD (reference is 64 MHz) TJ= -20 to 105 °C -1(4) -1(4) TJ= -40 to 130 °C -2(4) -1(4) tsu(HSI) Start-up time - - 1.4 2.0 μs tstab(HSI) Stabilization time At 1% of target frequency - 4 8 μs At 1% of target frequency - - 4 IDD(HSI) Power consumption - - 300 450 μA 1. Specified by design - Not tested in production, unless otherwise specified. 2. Calibrated during manufacturing tests. 3. Trimming value of HSICAL[8:0]. 4. Guaranteed by characterization - Not tested in production. Table 45. HSI oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 46. CSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fCSI Frequency VDD = 3.3 V, TJ = 30 °C 3.96(2) 44.04(2) MHz TRIM User trimming step Trimming is not a multiple of 16 - 0.40 0.75 % Trimming is not a multiple of 32 -4.75 -2.75 0.75 Other trimmings are a multiple of 32 (not including multiples of 64 and 128) -0.43 0.00 0.75 DuCy(CSI) Duty cycle - 45 - 55 % ∆TEMP(CSI) Frequency drift over temperature TJ= 0 to 85 °C -3.7(3) -4.5(3) % TJ= -40 to TJ = 130 °C -11(3) -7.5(3) % ∆VDD(CSI) Frequency drift over VDD VDD= 1.71 to 3.6 V -0.06 - 0.06 % tsu(CSI) Start-up time - - 1 2 μs tstab(CSI) Stabilization time (to reach ± 3% of fCSI) - - - 4 cycle IDD(CSI) Power consumption - - 23 30 μA 1. Specified by design - Not tested in production, unless otherwise specified. 2. Calibrated during manufacturing tests. 3. Evaluated by characterization - Not tested in production. |
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