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ST10F273 bảng dữ liệu(PDF) 133 Page - STMicroelectronics |
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ST10F273 bảng dữ liệu(HTML) 133 Page - STMicroelectronics |
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133 / 179 page ![]() ST10F273 Electrical characteristics 133/179 24.6 Flash characteristics VDD = 5 V ± 10%, V SS = 0 V Table 65. Flash characteristics Parameter Typical Maximum Unit Notes TA = 25°C TA = 125°C 0 cycles(1) 1. The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer). 0 cycles(1) 100k cycles Word program (32-bit)(2) 2. Word and Double Word Programming times are provided as average values derived from a full sector programming time: absolute value of a Word or Double Word Programming time could be longer than the average value. 35 80 290 µs– Double word program (64-bit)(2) 60 150 570 µs– Bank 0 program (384K) (double word program) 2.9 7.4 28.0 s – Bank 1 program (128K) (double word program) 1.0 2.5 9.3 s – Sector erase (8K) 0.6 0.5 0.9 0.8 1.0 0.9 s not preprogrammed preprogrammed Sector erase (32K) 1.1 0.8 2.0 1.8 2.7 2.5 s not preprogrammed preprogrammed Sector erase (64K) 1.7 1.3 3.7 3.3 5.1 4.7 s not preprogrammed preprogrammed Bank 0 erase (384K)(3) 3. Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the Bank). As ST10F273 implements only one bank, the Bank Erase operation is equivalent to Module and Chip Erase operations. 8.2 5.8 20.2 17.7 28.6 26.1 s not preprogrammed preprogrammed Bank 1 erase (128K)(3) 3.0 2.2 7.0 6.2 9.8 9.0 s not preprogrammed preprogrammed Recovery from power-down (tPD) -40 40 µs (4) 4. Not 100% tested, guaranteed by Design Characterization Program suspend latency(4) -10 10 µs Erase suspend latency(4) -30 30 µs Erase suspend request rate(4) 20 20 20 ms Minimum delay between 2 requests Set protection(4) 40 170 170 µs |
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