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ST10F276 bảng dữ liệu(PDF) 202 Page - STMicroelectronics

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Electrical characteristics
ST10F276
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Figure 54.
Crystal oscillator and resonator connection diagram
The given values of CA do not include the stray capacitance of the package and of the
printed circuit board: The negative resistance values are calculated assuming additional 5pF
to the values in the table. The crystal shunt capacitance (C0), the package and the stray
capacitance between XTAL1 and XTAL2 pins is globally assumed equal to 4pF.
The external resistance between XTAL1 and XTAL2 is not necessary, since already present
on the silicon.
23.8.14
32 kHz Oscillator specifications
Conditions: VDD = 5V ±10%, TA = –40 / +125°C
Table 99.
Negative resistance (absolute min. value @125oC / VDD = 4.5V)
CA (pF)
12
15
18
22
27
33
39
47
4 MHz
460
Ω
550
Ω
675
Ω
800
Ω
840
Ω
1000
Ω
1180
Ω
1200
Ω
8 MHz
380
Ω
460
Ω
540
Ω
640
Ω
580
Ω
--
-
12 MHz
370
Ω
420
Ω
360
Ω
--
--
-
CA
CA
Crystal
Resonator
ST10F276
ST10F276
Table 100.
32 kHz Oscillator specifications
Symbol
Parameter
Conditions
Value
Unit
Min.
Typ.
Max.
gm32
Oscillator (1)
1.
At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started,
the current biasing is reduced to lower the power consumption of the system.
Start-up
20
31
50
µA/V
Normal run
8
17
30
VOSC32
Oscillation amplitude (2))
2.
Not 100% tested, guaranteed by design characterization.
Peak to peak
0.5
1.0
2.4
V
VAV32
Oscillation voltage level (2)
Sine wave middle
0.7
0.9
1.2
tSTUP32
Oscillator start-up time(2)
Stable VDD
–15
s



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