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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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AM70PDL129CDH85IS bảng dữ liệu(PDF) 115 Page - Advanced Micro Devices |
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AM70PDL129CDH85IS bảng dữ liệu(HTML) 115 Page - Advanced Micro Devices |
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115 / 127 page  November 24, 2003 Am70PDL127CDH/Am70PDL129CDH 113 ADV ANCE I N FO RMAT I O N AC CHARACTERISTICS Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. 3. For 1–16 words/1–32 bytes programmed. 4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer. 6. AC Specifications listed are tested with V IO = VCC. Contact AMD for information on AC operation with VIO ≠ V CC. Parameter All Speed Options JEDEC Std. Description Unit t AVAV t WC Write Cycle Time (Note 1) Min 110 ns t AVWL t AS Address Setup Time Min 0 ns t ASO Address Setup Time to OE# low during toggle bit polling Min 15 ns t WLAX t AH Address Hold Time Min 45 ns t AHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns t DVWH t DS Data Setup Time Min 45 ns t WHDX t DH Data Hold Time Min 0 ns t OEPH Output Enable High during toggle bit polling Min 20 ns t GHWL t GHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t ELWL t CS CE# Setup Time Min 0 ns t WHEH t CH CE# Hold Time Min 0 ns t WLWH t WP Write Pulse Width Min 35 ns t WHDL t WPH Write Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 352 µs Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 11 µs Per Word Typ 22 µs Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 8.8 µs Per Word Typ 17.6 µs Single Word/Byte Program Operation (Note 2, 5) Byte Typ 100 µs Word 100 Single Word/Byte Accelerated Programming Operation (Note 2, 5) Byte Typ 90 Word 90 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec t VHH V HH Rise and Fall Time (Note 1) Min 250 ns t VCS V CC Setup Time (Note 1) Min 50 µs t BUSY WE# High to RY/BY# Low Min 110 ns |
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