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STM32U545NET6QTR bảng dữ liệu(PDF) 202 Page - STMicroelectronics |
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STM32U545NET6QTR bảng dữ liệu(HTML) 202 Page - STMicroelectronics |
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202 / 283 page ![]() Electrical characteristics STM32U545xx 202/283 DS14216 Rev 1 5.3.10 Flash memory characteristics Table 87. Flash memory characteristics(1) Symbol Parameter Conditions Typ Max(2) Unit tprog 128-bit programming time Normal mode 118 118 µs Burst mode 48 48 tprog_page One 8-Kbyte page programming time fAHB = 160 MHz, normal mode 60.2 - ms fAHB = 160 MHz, burst mode 24.5 - tprog_bank One 1-Mbyte bank programming time fAHB = 160 MHz, normal mode 7710 - fAHB = 160 MHz, burst mode 3140 - tERASE One 8-Kbyte page erase time 10 k endurance cycles 1.5 2.4 100 k endurance cycles 1.7 3.4 tME Mass erase time (one bank) 10 k endurance cycles 49 77 Mass erase time (two banks) 98 154 IDD(3) Average consumption from VDD Write mode 2.1 - mA Erase mode 1.3 - Maximum current (peak) Write mode 2.6 - Erase mode 3.0 - 1. Specified by design. Not tested in production. 2. Evaluated by characterization after cycling. Not tested in production. 3. Evaluated by characterization. Not tested in production. Table 88. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) Unit NEND Endurance Whole bank TA = –40 to 125 °C 100 kcycles tRET Data retention TA = 85 °C after 1 kcycle(2) 30 Years TA = 105 °C after 1 kcycle(2) 15 TA = 125 °C after 1 kcycle(2) 10 TA = 55 °C after 10 kcycles(2) 30 TA = 85 °C after 10 kcycles(2) 15 TA = 105 °C after 10 kcycles(2) 10 TA = 55 °C after 100 kcycles(2) 30 TA = 85 °C after 100 kcycles(2) 15 TA = 105 °C after 100 kcycles(2) 10 1. Evaluated by characterization. Not tested in production. 2. Cycling performed over the whole temperature range. |
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