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STM32H757II bảng dữ liệu(PDF) 153 Page - STMicroelectronics

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DS12931 Rev 1
153/251
STM32H757xI
Electrical characteristics
230
6.3.16
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each
sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC
JS-001 and ANSI/ESDA/JEDEC JS-002 standards.
Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
•
A supply overvoltage is applied to each power supply pin
•
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with JESD78 IC latchup standard.
Table 69. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Packages
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body
model)
TA= +25 °C conforming to
ANSI/ESDA/JEDEC JS-
001
All
1C
1000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA= +25 °C conforming to
ANSI/ESDA/JEDEC JS-
002
All
C1
250
1. Guaranteed by characterization results.
Table 70. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latchup class
TA = +25 °C conforming to JESD78
II level A



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