STM32H757II datasheet(116/251 Pages) STMICROELECTRONICS

116 / 251 page

Electrical characteristics

STM32H757xI

116/251

DS12931 Rev 1

6.3.6

Embedded reference voltage

The parameters given in Table 30 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 23: General operating

conditions.

VAVM_0

Analog voltage detector for

VDDA threshold 0

Rising edge

1.66

1.71

1.76

Falling edge

1.56

1.61

1.66

VAVM_1

Analog voltage detector for

VDDA threshold 1

Rising edge

2.06

2.12

2.19

Falling edge

1.96

2.02

2.08

VAVM_2

Analog voltage detector for

VDDA threshold 2

Rising edge

2.42

2.50

2.58

Falling edge

2.35

2.42

2.49

VAVM_3

Analog voltage detector for

VDDA threshold 3

Rising edge

2.74

2.83

2.91

Falling edge

2.64

2.72

2.80

Vhyst_VDDA

Hysteresis of VDDA voltage

detector

100

IDD_PVM

PVM consumption from

VDD(1)

0.25

µA

IDD_VDDA

Voltage detector

consumption on VDDA(1)

Resistor bridge

2.5

µA

1. Guaranteed by design.

2. BOR0 is enabled in all modes and its consumption is therefore included in the supply current characteristics tables (refer to

Section 6.3.7: Supply current characteristics).

Table 29. Reset and power control block characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 30. Embedded reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltages

-40°C < TJ < 125 °C,

VDD = 3.3 V

1.180

1.216

1.255

tS_vrefint(1)(2)

ADC sampling time when

reading the internal reference

voltage

-4.3

µs

tS_vbat(1)(2)

VBAT sampling time when

reading the internal VBAT

reference voltage

-9

Irefbuf(2)

Reference Buffer

consumption for ADC

VDDA=3.3 V

13.5

µA

ΔV

REFINT

(2)

Internal reference voltage

spread over the temperature

range

-40°C < TJ < 125 °C

Tcoeff(2)

Average temperature

coefficient

Average temperature

coefficient

-20

ppm/°C

VDDcoeff(2)

Average Voltage coefficient

3.0V < VDD < 3.6V

1370

ppm/V

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