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STM32G0B1CEU6 bảng dữ liệu(PDF) 123 Page - STMicroelectronics

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STM32G0B1CEU6 bảng dữ liệu(HTML) 123 Page - STMicroelectronics

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STM32G0B1xB/xC/xE
Electrical characteristics
124
Note:
When VBUS sensing feature is enabled, PA9 should be left at its default state (floating
input), not as alternate function. A typical 200 µA current consumption of the sensing block
(current to voltage conversion to determine the different sessions) can be observed on PA9
when the feature is enabled.
Figure 36. USB timings – definition of data signal rise and fall time
ai14137b
Cross over
points
Differential
data lines
VCRS
VSS
tf
tr
Table 79. USB electrical characteristics(1)
Driver characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
trLS
Rise time in LS(2)
CL = 200 to 600 pF
75
300
ns
tfLS
Fall time in LS(2)
CL = 200 to 600 pF
75
300
ns
trfmLS
Rise/ fall time matching in LS
tr/tf
80
125
%
trFS
Rise time in FS(2)
CL = 50 pF
4
20
ns
tfFS
Fall time in FS(2)
CL = 50 pF
4
20
ns
trfmFS
Rise/ fall time matching in FS
tr/tf
90
111
%
VCRS
Output signal crossover voltage (LS/FS)
-
1.3
2.0
V
ZDRV
Output driver impedance(3)
Driving high or low
28
44
Ω
1. Guaranteed by design.
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.
Table 80. USB BCD DC electrical characteristics(1)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IDD(USBBCD)
Primary detection mode
consumption
--
-
300
μA
Secondary detection mode
consumption
--
-
300
μA



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