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LQFP100 bảng dữ liệu(PDF) 139 Page - STMicroelectronics

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LQFP100 bảng dữ liệu(HTML) 139 Page - STMicroelectronics

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DS8626 Rev 9
139/203
STM32F405xx, STM32F407xx
Electrical characteristics
5.3.23
VBAT monitoring characteristics
5.3.24
Embedded reference voltage
The parameters given in Table 72 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 14.
5.3.25
DAC electrical characteristics
Table 71. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
2
-
Er(1)
Error on Q
–1
-
+1
%
TS_vbat(2)(2)
ADC sampling time when reading the VBAT
1 mV accuracy
5-
-
µs
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 72. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C 1.18
1.21
1.24
V
TS_vrefint(1)
ADC sampling time when reading the
internal reference voltage
-10
-
-
µs
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
VDD = 3 V
-
3
5
mV
TCoeff(2)
Temperature coefficient
-
-
30
50
ppm/°C
tSTART(2)
Startup time
-
-
6
10
µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.
Table 73. Internal reference voltage calibration values
Symbol
Parameter
Memory address
VREFIN_CAL
Raw data acquired at temperature of 30 °C, VDDA=3.3 V
0x1FFF 7A2A - 0x1FFF 7A2B
Table 74. DAC characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Comments
VDDA
Analog supply voltage
1.8(1)
-3.6
V
VREF+
Reference supply voltage
1.8(1)
-3.6
V
VREF+ ≤ VDDA
VSSA
Ground
0
-
0
V



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