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LQFP100 bảng dữ liệu(PDF) 103 Page - STMicroelectronics

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LQFP100 bảng dữ liệu(HTML) 103 Page - STMicroelectronics

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DS8626 Rev 9
103/203
STM32F405xx, STM32F407xx
Electrical characteristics
Figure 33. Typical application with a 32.768 kHz crystal
5.3.9
Internal clock source characteristics
The parameters given in Table 34 and Table 35 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 14.
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
ai17531
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32F
32.768 kH z
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2
Table 34. HSI oscillator characteristics (1)
1. VDD = 3.3 V, PLL OFF, TA = –40 to 125 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
-
16
-
MHz
ACCHSI
HSI user trimming step(2)
2. Guaranteed by design.
--
-
1
%
Accuracy of the HSI oscillator
TA = –40 to 105 °C(3)
3. Guaranteed by characterization.
–8
-
4.5
%
TA = –10 to 85 °C(3)
–4
-
4
%
TA = 25 °C(4)
4. Factory calibrated, parts not soldered.
–1
-
1
%
tsu(HSI)(2) HSI oscillator startup time
-
-
2.2
4
µs
IDD(HSI)(2)
HSI oscillator power
consumption
-
-
60
80
µA
Table 35. LSI oscillator characteristics (1)
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
fLSI(2)
2. Guaranteed by characterization.
Frequency
17
32
47
kHz
tsu(LSI)(3)
3. Guaranteed by design.
LSI oscillator startup time
-
15
40
µs
IDD(LSI)(3)
LSI oscillator power consumption
-
0.4
0.6
µA



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