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STM32F732IE bảng dữ liệu(PDF) 132 Page - STMicroelectronics

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STM32F732IE bảng dữ liệu(HTML) 132 Page - STMicroelectronics

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Electrical characteristics
STM32F732xx STM32F733xx
132/226
DS11854 Rev 6
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST Microelectronics website
www.st.com.
Figure 38. Typical application with a 32.768 kHz crystal
6.3.10
Internal clock source characteristics
The parameters given in Table 42 and Table 43 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 16.
High-speed internal (HSI) RC oscillator
Gm_crit_max Maximum critical crystal gm
LSEDRV[1:0]=00
Low drive capability
-
-
0.48
µA/V
LSEDRV[1:0]=10
Medium low drive capability
-
-
0.75
LSEDRV[1:0]=01
Medium high drive capability
--
1.7
LSEDRV[1:0]=11
High drive capability
--
2.7
tSU(2)
start-up time
VDD is stabilized
-
2
-
s
1. Guaranteed by design.
2. Guaranteed by characterization results. tSU is the start-up time measured from the moment it is enabled
(by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard
crystal resonator and it can vary significantly with the crystal manufacturer.
Table 41. LSE oscillator characteristics (fLSE = 32.768 kHz) (1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max Unit
ai17531a
OSC32_ OU T
OSC32_ IN
fLSE
C L1
R F
STM32F
32.768 kHz
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
C L2
Table 42. HSI oscillator characteristics (1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
-
16
-
MHz
ACCHSI
HSI user trimming step(2)
--
-
1
%
Accuracy of the HSI oscillator
TA = –40 to 105 °C(3) − 8-4.5
%
TA = –10 to 85 °C(3)
− 4-
4
%
TA = 25 °C(4)
− 1-
1
%



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