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STM32F732IE bảng dữ liệu(PDF) 132 Page - STMicroelectronics |
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STM32F732IE bảng dữ liệu(HTML) 132 Page - STMicroelectronics |
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132 / 226 page ![]() Electrical characteristics STM32F732xx STM32F733xx 132/226 DS11854 Rev 6 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST Microelectronics website www.st.com. Figure 38. Typical application with a 32.768 kHz crystal 6.3.10 Internal clock source characteristics The parameters given in Table 42 and Table 43 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 16. High-speed internal (HSI) RC oscillator Gm_crit_max Maximum critical crystal gm LSEDRV[1:0]=00 Low drive capability - - 0.48 µA/V LSEDRV[1:0]=10 Medium low drive capability - - 0.75 LSEDRV[1:0]=01 Medium high drive capability -- 1.7 LSEDRV[1:0]=11 High drive capability -- 2.7 tSU(2) start-up time VDD is stabilized - 2 - s 1. Guaranteed by design. 2. Guaranteed by characterization results. tSU is the start-up time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. Table 41. LSE oscillator characteristics (fLSE = 32.768 kHz) (1) (continued) Symbol Parameter Conditions Min Typ Max Unit ai17531a OSC32_ OU T OSC32_ IN fLSE C L1 R F STM32F 32.768 kHz resonator Resonator with integrated capacitors Bias controlled gain C L2 Table 42. HSI oscillator characteristics (1) Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) − 8-4.5 % TA = –10 to 85 °C(3) − 4- 4 % TA = 25 °C(4) − 1- 1 % |
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