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tên linh kiện 03N70I-H
Giải thích chi tiết về linh kiện  N-Channel 700 V (D-S) Power MOSFET
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nhà sản xuất  VBSEMI [VBsemi Electronics Co.,Ltd]
Trang chủ  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 2 A
c. 1.6 mm from case
d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C
e. Limited by maximum junction temperature
PRODUCT SUMMARY
VDS (V)
700
RDS(on) max. () at 25 °C
VGS = 10 V
1.4
Qg Typ. (nC)
24
Qgs (nC)
6
Qgd (nC)
11
Configuration
Single
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
VDS
700
V
Gate-source voltage
VGS
± 30
Continuous drain current (TJ = 150 °C) e
VGS at 10 V
TC = 25 °C
ID
7
A
TC = 100 °C
5
Pulsed drain current a
IDM
18
Linear derating factor
0.63
W/°C
Single pulse avalanche energy b
EAS
56
mJ
Maximum power dissipation
PD
31
W
Operating junction and storage temperature range
TJ, Tstg
-55 to +150
°C
Drain-source voltage slope
TJ = 125 °C
dV/dt
37
V/ns
Reverse diode dV/dt d
27
Soldering recommendations (peak temperature) c
For 10 s
300
°C
Mounting torque
M3 screw
0.6
Nm
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS directive 2002/95/EC
G D S
TO-220 FULLPAK
Top View
N-Cha
(D-S) Power MOSFET
nnel 00 V
7
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
03N70I-H


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