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STM32MP151AAA3 bảng dữ liệu(PDF) 150 Page - STMicroelectronics

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STM32MP151AAA3 bảng dữ liệu(HTML) 150 Page - STMicroelectronics

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Electrical characteristics
STM32MP151A/D
150/253
DS12500 Rev 3
4 MHz low-power internal RC oscillator (CSI)
32 kHz low-speed internal (LSI) RC oscillator
6.3.11
PLL characteristics
The parameters given in Table 38, Table 39, Table 40 are derived from tests performed
under temperature and VDD supply voltage conditions summarized in Table 13: General
operating conditions.
Table 36. CSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fCSI(2)
CSI frequency
VDD = 3.3 V, TJ = 30 °C
3.98
4
4.02
MHz
TRIM
Trimming step
Trimming code is not a
multiple of 16
-0.85
1
%
Trimming code is a multiple of
16
-
-1.65
-
-
DuCy(CSI)
Duty Cycle
-
45
-
55
%
VDD (CSI) +
TEMP (CSI)(3)
CSI oscillator frequency drift over
VDD & drift over temperature
VDD = 1.71 to 3.6 V
TJ = 0 to 85 °C
-
±1.43
-
%
tsu(CSI)
CSI oscillator startup time
-
-
1.5
2.4
µs
tstab(CSI)
CSI oscillator stabilization time
(to reach ±5% of fCSI)
TJ = 0 to 85 °C
-
5
-
cycle
IDD(CSI)
CSI oscillator power consumption
-
-
30
-
µA
1. Guaranteed by design.
2. Guaranteed by test in production.
3. Guaranteed by characterization results.
Table 37. LSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fLSI
LSI frequency
TJ = 30 °C,(2)
VDD = 3.3 V
31.4
32
32.6
kHz
TJ = -40 to 125 °C,
VDD = 1.71 to 3.6 V
29
32
33.6
tsu(LSI)
LSI oscillator startup time (Time
between Enable rising and First
output clock edge.)
-
-
64
125
µs
tstab(LSI)
LSI oscillator stabilization time
(5% of final value)
--
110
170
IDD(LSI)
LSI oscillator power
consumption
-
-
120
230
nA
1. Guaranteed by design.
2. Guaranteed by test in production.



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