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STM32L4A6VG bảng dữ liệu(PDF) 248 Page - STMicroelectronics

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STM32L4A6VG bảng dữ liệu(HTML) 248 Page - STMicroelectronics

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Electrical characteristics
STM32L4A6xG
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DS11584 Rev 8
Figure 59. NAND controller waveforms for common memory write access
6.3.30
Camera interface (DCMI) timing specifications
Unless otherwise specified, the parameters given in Table 119 for DCMI are derived from
tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage
Table 117. Switching characteristics for NAND Flash read cycles(1)(2)
1. CL = 30 pF.
2. Guaranteed by characterization results.
Symbol
Parameter
Min
Max
Unit
Tw(N0E)
FMC_NOE low width
4THCLK-0.5 4THCLK+0.5
ns
Tsu(D-NOE)
FMC_D[15-0] valid data before FMC_NOE high
12
-
Th(NOE-D)
FMC_D[15-0] valid data after FMC_NOE high
0
-
Td(NCE-NOE) FMC_NCE valid before FMC_NOE low
-
3THCLK+1
Th(NOE-ALE)
FMC_NOE high to FMC_ALE invalid
4THCLK-2
-
Table 118. Switching characteristics for NAND Flash write cycles(1)(2)
1. CL = 30 pF.
2. Guaranteed by characterization results.
Symbol
Parameter
Min
Max
Unit
Tw(NWE)
FMC_NWE low width
4THCLK-0.5
4THCLK+0.5
ns
Tv(NWE-D)
FMC_NWE low to FMC_D[15-0] valid
5
-
Th(NWE-D)
FMC_NWE high to FMC_D[15-0] invalid
2THCLK-1
-
Td(D-NWE)
FMC_D[15-0] valid before FMC_NWE high
5THCLK-1
-
Td(NCE_NWE)
FMC_NCE valid before FMC_NWE low
-
3THCLK+1
Th(NWE-ALE)
FMC_NWE high to FMC_ALE invalid
2THCLK-2
-



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