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STM32MP157C bảng dữ liệu(PDF) 210 Page - STMicroelectronics

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STM32MP157C bảng dữ liệu(HTML) 210 Page - STMicroelectronics

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Electrical characteristics
STM32MP157C
210/258
DS12505 Rev 2
6.3.28
Temperature and VBAT monitoring characteristics for
tamper detection
6.3.29
VDDCORE monitoring characteristics
6.3.30
Voltage booster for analog switch
Table 87. VBAT charging characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
RBC
Battery charging resistor
VBRS in PWR_CR3= 0
-
5
-
kΩ
VBRS in PWR_CR3= 1
-
1.5
-
Table 88. Temperature and VBAT monitoring characteristics for temper detection
Symbol
Parameter
Min
Typ
Max
Unit
TEMPhigh
High temperature monitoring
105
116
126
oC
TEMPlow
Low temperature monitoring
-42
-31
-20
VBAThigh(1)
1. Monitored supply is VSW (i.e. VDD if VDD is present, VBAT otherwise)
High supply monitoring
3.47
3.59
3.73
V
VBATlow(1)
Low supply monitoring
1.3
1.34
1.43
Table 89. VDDCORE monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
tS_vddcore(1)
1. Guaranteed by design.
ADC sampling time when reading VDDCORE
input
100
-
-
ns
Table 90. Voltage booster for analog switch characteristics
Symbol
Parameter
Condition
Min Typ Max Unit
VDD
Supply voltage
-
1.71
-
3.6
V
tSU(BOOST) Booster startup time
-
-
-
50
µs
IDD(BOOST) Booster consumption
1.71 V ≤ VDD ≤ 2.7 V
-
-
125
µA
2.7 V < VDD < 3.6 V
-
-
250



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