General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V

                     RDS(ON) = 0.070 Ω @ VGS = –2.5 V.

• Low gate charge (13nC typical)

• High performance trench technology for extremely low RDS(ON).

• High power and current handling capability in a widely used surface mount package.

Applications

• Low Dropout Regulator

• DC/DC converter

• Load switch

• Motor driving