Description
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized
for power management applications for a wide range of gate drive voltages (2.5V – 12V).

Features
•–1.5 A, –20 V. Rds(on)= 0.145 Ω@ Vgs= –4.5 V
Rds(on)= 0.210 Ω@ Vgs= –2.5 V
• Low gate charge
• High performance trench technology for extremely low Rds(on)
• Compact industry standard SC70-6 surface mount package