General Description
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

Features
• 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.
• Low gate charge (3nC typical).
• High performance trench technology for extremely low RDS(ON).
• Compact industry standard SC70-6 surface mount package.

Applications
• Load switch
• Power management
• DC/DC converter