Description
The ACE11306A is the N-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance and provide superior
switching performance. These devices are particularly suited for low voltage application such as notebook
computer power management and other batter powered circuits where high-side switching, low in-line
power loss and resistance to transients are needed.

Features
⚫ 30V/0.95A, RDS(ON)=550mΩ@VGS=4.5V
⚫ 30V/0.75A, RDS(ON)=650mΩ@VGS=2.5V
⚫ 30V/0.65A, RDS(ON)=850mΩ@VGS=1.8V
⚫ Super high-density cell design for extremely low RDS(ON)
⚫ Exceptional on-resistance and maximum DC current capability

Application
⚫ Power Management in Note book
⚫ Portable Equipment
⚫ Battery Powered System
⚫ DC/DC Converter
⚫ Load Switch
⚫ DSC
⚫ LCD Display inverter