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Numonyx B.V
|
M58WR016KU |
2Mb/123P |
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories |
| M29DW323DT |
1Mb/51P |
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory |
| M29W128GH70N3E |
1Mb/94P |
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory |
| M58PR512LE |
2Mb/123P |
512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| NAND01G-B2B |
1Mb/60P |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| M45PE10 |
990Kb/47P |
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface |
| SMSXXXAF |
1Mb/61P |
64 MByte, 128 MByte, 256 MByte 512 MByte and 1 GByte, 3.3V Supply Secure Digital??Card |
| NAND01GR3B2C |
1Mb/67P |
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5 |
| M29DW127G70NF6E |
1Mb/95P |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory |
| M45PE80 |
911Kb/47P |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface |
| M25PE20 |
1Mb/64P |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| NAND04G-B2D |
1Mb/69P |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories |
| M36W0R6040T1 |
441Kb/22P |
64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 횞16) PSRAM, multi-chip package |
| M39P0R9080E4 |
466Kb/23P |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package |
| M36W0R6040T3 |
468Kb/22P |
64-Mbit (4 Mbits 횞16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 횞16) or 32-Mbit (2 Mbits x16) PSRAM MCP |