| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
Siemens Semiconductor G...
|
BSM50GD60DN2E3226 |
121Kb/9P |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| BSM25GD120D2 |
137Kb/9P |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| 5SP4392-7 |
1Mb/7P |
Miniature circuit breaker 400 V 10kA, 3-pole, C, 125 A, D=70 mm
06/08/2020 |
| BSM15GD60DN2 |
123Kb/9P |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| BSM50GD120DN2 |
126Kb/9P |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| BSM75GD120DN2 |
185Kb/9P |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
| BSM200GT120DN2 |
180Kb/9P |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
| BSM100GD120DN2 |
185Kb/9P |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
| BSM150GT120DN2 |
182Kb/9P |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
| CGY40 |
30Kb/5P |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz) |
| BSM50GD120DN2E3226 |
132Kb/9P |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
| 3SB3000-2EA11 |
101Kb/3P |
22MM PLASTIC ROUND ACTUATOR: SELECTOR SWITCH 3 SWITCH POSITIONS I-O-II MOMENTARY CONTACT TYPE NON-ILLUMINATED WITH HOLDER BLACK |
| 3VL3725-1DC36-0AA0 |
223Kb/5P |
circuit breaker VL250N standard breaking capacity Icu=55kA, 415V AC 3-pole, line protection Electronic Trip Unit TM, LI In=250A
06/08/2020 |
| CGY180 |
278Kb/15P |
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V) |
| BAR63 |
80Kb/4P |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| BAR63-03W |
52Kb/4P |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| BAR63-W |
46Kb/4P |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| 6ES7134-6JD00-0CA1 |
213Kb/4P |
SIMATIC ET 200SP, Analog input module, AI 4xRTD/TC High Feature, suitable for BU type A0, A1, Color code CC00, channel diagnostics, 16 bit, +/-0.1%, 2-/3-/4-wire
7/8/2022 |
| BGA310 |
20Kb/4P |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
| 3SE6604-2BA |
267Kb/3P |
magnetically-operated switch, contact block, large, 25 x 88 mm, 2 NC connection cable 3 m LIYY 4 x 0.25 mm2 required solenoid 3SE6704-2BA or with increased operating distance 3SE6701-2BA
10/20/2023 |
Vietnamese ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Indian
Mexican
British
New Zealand
