| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |

WOLFSPEED, INC.
|
CGHV35400F |
928Kb/11P |
400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Rev 5.2 - February 2021 |
| CGHV35400F1 |
1Mb/21P |
400 W, 2.9 - 3.5 GHz, GaN HEMT Rev. 1.0, 2022-8-4 |
| CGHV40050 |
2Mb/11P |
50 W, DC - 4.0 GHz, 50 V, GaN HEMT Rev. 2.4, 2022-12-2 |
| CGHV96050F2 |
1Mb/13P |
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Rev. 3.5, 2022-12-13 |
| CGHV96050F1 |
1Mb/13P |
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Rev. 2.3, 2022-12-13 |
| CAB400M12XM3 |
801Kb/9P |
1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module Rev. -, 2019-10-31 |
| PTVA120501EA |
695Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Rev. 04, 2023-07-10 |
| CGHV40200PP |
1Mb/12P |
200 W, 50 V, GaN HEMT Rev. 1.5, 2022-12-8 |
| CGHV38375F |
1Mb/22P |
400 W, 2.75 - 3.75 GHz, Internally-Matched, GaN-on-Silicon Carbide Transistor (IM-FET) Rev. 1.0, 2022-10-12 |
| PXAE213708NB |
707Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20 |
| PTRA094858NF |
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 859 – 960 MHz Rev. 04, 2023-06-28 |
| PXAE263708NB |
612Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23 |
| WAB400M12BM3 |
1Mb/12P |
1200 V, 400 A All-Silicon Carbide THB-80 Qualified, Conduction Optimized, Half-Bridge Module Rev. A 2020-05-22 |
| GTRA384802FC-V1 |
585Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27 |
| GTRA364002FC |
511Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27 |
| CGHV27015S |
1Mb/12P |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT Rev. 4.0, 2022-8-3 |
| CGHV40030 |
3Mb/15P |
30 W, DC - 6 GHz, 50 V, GaN HEMT Rev. 1.6, 2022-12-13 |
| CGHV40100 |
2Mb/16P |
100 W, DC - 3.0 GHz, 50 V, GaN HEMT Rev. 3.7, 2022-12-13 |
| CGHV40180F |
2Mb/16P |
180 W, DC - 2.0 GHz, 50 V, GaN HEMT Rev. 2.0, 2022-8-30 |
| CGHV40180P |
713Kb/11P |
180 W, DC - 2.0 GHz, 50 V, GaN HEMT Rev 1.3 - April 2020 |