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2SC3585 Datasheet with Chat AI
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  • Part No.2SC3585
    ManufacturerISC
    Size308 Kbytes
    Pages6 pages
    DescriptionLow Noise and High Gain
    Datasheet Summary with AI

    INCHANGE Semiconductor: 2SC3585 NPN RF Transistor

    www.iscsemi.cn

    Description:

    The 2SC3585 is an NPN RF transistor designed for various RF applications.

    Absolute Maximum Ratings:

    ️· Junction Temperature (TJ): 150 °C
    ️· Storage Temperature Range: -65 ~ 150 °C
    ️· Collector Power Dissipation (PC) @ TC = 25 °C: 0.2 W

    Electrical Characteristics

    ️· Tc = 25 °C unless otherwise specified

    Parameter Symbol Conditions Min Typ Max Unit
    Collector Cutoff Current ICBO VCB = 10V, IE = 0 1.0 μA
    Emitter Cutoff Current IEBO VEB = 1V, IC = 0 1.0 μA
    DC Current Gain hFE IC = 10mA, VCE = 6V 50 250
    Current-Gain Bandwidth fT IC = 10mA, VCE = 6V 10 GHz
    Feedback Capacitance Cre IE = 0, VCB = 10V, f = 1.0MHz 0.3 0.8 pF
    Insertion Power Gain S21e IC = 10mA, VCE = 6V, f = 2.0GHz 6.0 8.0 dB
    Maximum Available Gain MAG IC = 10mA, VCE = 6V, f = 2.0GHz 10 dB
    Noise Figure NF IC = 5mA, VCE = 6V, f = 2.0GHz 1.8 3.0 dB

    S-Parameters

    ️· VCE = 6V, IC = 3mA, ZO = 50Ω

    f (MHz) S11 ∠S11 S21 ∠S21 S12 ∠S12 S22 ∠S22
    200 0.858 -23.1 8.499 153.3 0.030 46.5 0.905 -13.5
    400 0.724 -40.6 6.923 131.6 0.060 58.7 0.826 -21.2
    600 0.580 -51.1 5.951 118.4 0.080 60.3 0.749 -27.0
    800 0.457 -58.9 4.615 104.9 0.099 60.2 0.666 -28.6
    1000 0.362 -65.6 4.134 98.0 0.106 61.2 0.614 -30.1
    1200 0.304 -73.1 3.412 88.9 0.129 61.1 0.574 -30.0
    1400 0.232 -82.2 3.180 82.0 0.148 60.1 0.542 -31.7
    1600 0.179 -84.9 2.763 75.7 0.154 59.5 0.514 -35.2
    1800 0.147 -88.2 2.726 70.5 0.188 58.7 0.483 -40.1
    2000 0.108 -104.1 2.378 64.9 0.197 56.8 0.455 -42.6

    S-Parameters

    ️· VCE = 6V, IC = 10mA, ZO = 50Ω

    f (MHz) S11 ∠S11 S21 ∠S21 S12 ∠S12 S22 ∠S22
    200 0.613 -37.0 16.141 133.9 0.021 52.5 0.781 -19.4
    400 0.406 -53.6 10.096 111.5 0.053 70.6 0.651 -22.4
    600 0.285 -56.0 7.640 101.4 0.064 73.0 0.590 -24.0
    800 0.214 -57.6 5.564 90.7 0.089 71.7 0.548 -22.8
    1000 0.156 -58.1 4.787 86.0 0.095 70.6 0.526 -23.3
    1200 0.130 -54.2 3.876 79.3 0.119 70.3 0.506 -22.1
    1400 0.105 -56.5 3.573 74.0 0.141 68.3 0.489 -24.8
    1600 0.065 -55.0 3.058 69.4 0.158 68.9 0.470 -27.9
    1800 0.042 -48.9 2.997 65.3 0.178 66.5 0.439 -31.4
    2000 0.018 -65.6 2.378 64.9 0.197 56.8 0.455 -42.6

    This cleaned-up version presents the data in a structured format that is easier to read and understand. I removed the repetitive title headers and consolidated the data.

    INCHANGE Semiconductor: 2SC3585 NPN RF Transistor

    www.iscsemi.cn

    Description:

    The 2SC3585 is an NPN RF transistor designed for various RF applications.

    Absolute Maximum Ratings:

    ️· Junction Temperature (TJ): 150 °C
    ️· Storage Temperature Range: -65 ~ 150 °C
    ️· Collector Power Dissipation (PC) @ TC = 25 °C: 0.2 W

    Electrical Characteristics

    ️· Tc = 25 °C unless otherwise specified

    Parameter Symbol Conditions Min Typ Max Unit
    Collector Cutoff Current ICBO VCB = 10V, IE = 0 1.0 μA
    Emitter Cutoff Current IEBO VEB = 1V, IC = 0 1.0 μA
    DC Current Gain hFE IC = 10mA, VCE = 6V 50 250
    Current-Gain Bandwidth fT IC = 10mA, VCE = 6V 10 GHz
    Feedback Capacitance Cre IE = 0, VCB = 10V, f = 1.0MHz 0.3 0.8 pF
    Insertion Power Gain S21e IC = 10mA, VCE = 6V, f = 2.0GHz 6.0 8.0 dB
    Maximum Available Gain MAG IC = 10mA, VCE = 6V, f = 2.0GHz 10 dB
    Noise Figure NF IC = 5mA, VCE = 6V, f = 2.0GHz 1.8 3.0 dB

    S-Parameters

    ️· VCE = 6V, IC = 3mA, ZO = 50Ω

    f (MHz) S11 ∠S11 S21 ∠S21 S12 ∠S12 S22 ∠S22
    200 0.858 -23.1 8.499 153.3 0.030 46.5 0.905 -13.5
    400 0.724 -40.6 6.923 131.6 0.060 58.7 0.826 -21.2
    600 0.580 -51.1 5.951 118.4 0.080 60.3 0.749 -27.0
    800 0.457 -58.9 4.615 104.9 0.099 60.2 0.666 -28.6
    1000 0.362 -65.6 4.134 98.0 0.106 61.2 0.614 -30.1
    1200 0.304 -73.1 3.412 88.9 0.129 61.1 0.574 -30.0
    1400 0.232 -82.2 3.180 82.0 0.148 60.1 0.542 -31.7
    1600 0.179 -84.9 2.763 75.7 0.154 59.5 0.514 -35.2
    1800 0.147 -88.2 2.726 70.5 0.188 58.7 0.483 -40.1
    2000 0.108 -104.1 2.378 64.9 0.197 56.8 0.455 -42.6

    S-Parameters

    ️· VCE = 6V, IC = 10mA, ZO = 50Ω

    f (MHz) S11 ∠S11 S21 ∠S21 S12 ∠S12 S22 ∠S22
    200 0.613 -37.0 16.141 133.9 0.021 52.5 0.781 -19.4
    400 0.406 -53.6 10.096 111.5 0.053 70.6 0.651 -22.4
    600 0.285 -56.0 7.640 101.4 0.064 73.0 0.590 -24.0
    800 0.214 -57.6 5.564 90.7 0.089 71.7 0.548 -22.8
    1000 0.156 -58.1 4.787 86.0 0.095 70.6 0.526 -23.3
    1200 0.130 -54.2 3.876 79.3 0.119 70.3 0.506 -22.1
    1400 0.105 -56.5 3.573 74.0 0.141 68.3 0.489 -24.8
    1600 0.065 -55.0 3.058 69.4 0.158 68.9 0.470 -27.9
    1800 0.042 -48.9 2.997 65.3 0.178 66.5 0.439 -31.4
    2000 0.018 -65.6 2.378 64.9 0.197 56.8 0.455 -42.6

    This cleaned-up version presents the data in a structured format that is easier to read and understand. I removed the repetitive title headers and consolidated the data.

    Part No.2SC3585
    ManufacturerISC
    Size308 Kbytes
    Pages6 pages
    DescriptionLow Noise and High Gain
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