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2SC4976 Datasheet with Chat AI

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# Example questions: ➢ How does the power dissipation (pc) curve relate ambient temperature (ta) and case temperature (tc) for the 2sc4976, and what are the key takeaways from this relationship?
➢ What are the typical collector current (ic) values for the 2sc4976 transistor, as indicated in the provided document?
➢ What are the key differences in the hfe ranges for the different classifications of the 2sc4976 transistor (e.g., the variations in the typical hfe values)?

Part No.	2SC4976_15
Manufacturer	KEXIN
Size	1Mb
Pages	3 pages
Description	NPN Transistors

Datasheet Summary with AI

1. General Information

️· Device: 2SC4976
️· Type: NPN Silicon Power Transistor
️· Application: Designed for high-frequency applications.
️· Power Dissipation: 35W
️· Operating Temperature: -55°C to +150°C

2. Electrical Characteristics (Absolute Maximum Ratings)

️· Collector-Emitter Voltage (VCEO): 70V
️· Collector-Base Voltage (VcB): 70V
️· Emitter-Collector Voltage (VECO): 70V
️· Collector Current (Ic): 10A
️· Emitter Current (IE): -10A
️· Power Dissipation (Pc): 35W
️· Junction Temperature (Tj): 150°C

3. Electrical Characteristics (DC Characteristics)
(Unless otherwise specified, Vce=10V, Ic=1A, Ta=25°C)

️· Collector-Emitter Breakdown Voltage (Vceo): 70V (min.)
️· Collector-Base Breakdown Voltage (Vcb): 70V (min.)
️· Emitter-Base Breakdown Voltage (Veb): 5V (max.)
️· Collector Cutoff Current (Icm): 100nA (max.)
️· Collector-Emitter Saturation Voltage (Vce(sat)): 2.0V (max.) at Ic = 10A, Ie = 10A
️· Collector-Base Saturation Voltage (Vcb): 0.8V (max.) at Ic=10A, IE=10A
️· Transition Frequency (ft): 30MHz (min.)
️· Amplification Factor (hFE): Ranges:
- 60-120 (Range 1)
- 100-200 (Range 1)
- 160-320 (Range 1)
️· DC Current Gain (Beta): See hFE ranges above.

4. Typical Characteristics

️· Ic vs. VCE (Collector Current vs. Collector-Emitter Voltage): A graph showing current flow with varying voltage (multiple curves for different saturation points).
️· Ic vs. T (Collector Current vs. Temperature): A graph showing how current changes with temperature.
️· hFE vs. Ic (DC Current Gain vs. Collector Current): A graph showing the relationship between current gain and collector current.
️· Vce(sat) vs. Tc (Collector-Emitter Saturation Voltage vs. Total Collector Current): A graph showing Vce(sat) changing as a function of total collector current.
️· Safe Operating Area Graph showing relationship of power dissipation and ambient temperature.

5. Package/Markings/Notes

️· Marking: Specific marking is not detailed in the text (typically a code to indicate the range).
️· Package: No Package information provided.
️· Notes:
- For pulse applications, duty cycle is 10%.
- For NPN transistors, a negative sign is used for current values.

Important Considerations:

️· Ranges: It's crucial to note the different ranges indicated for hFE (current gain). The actual device will fall into one of those ranges.
️· Graphs: The datasheet heavily relies on graphical representations. The graph data is not converted to numerical data.
️· Complete Datasheet: This is an extraction of the information present in the provided text. A full datasheet would contain additional details (e.g., exact package dimensions, reliability data).