1. General Description & Availability

️· The LS312 is a dual transistor (likely two matched transistors in a single package).
️· Available as a P-DIP (standard dual in-line package) or as bare die (unencapsulated chip)
️· Manufacturer: Linear Integrated Systems (now part of Micross Components).

2. Electrical Characteristics - Key Specs


️· VBE Matching (VBE1 – VBE2): Typically 0.2 mV (Very good matching)
️· VBE Differential Change (Δ(VBE1–VBE2)/ΔT): 0.5 to 2 μV/°C (relatively stable with temperature)
️· Base Current Differential (IB1 – IB2): Up to 5 nA
️· DC Current Gain (hFE): Typically 200 at various collector currents (10µA, 100µA, 1mA)
️· Saturation Voltage (VCE(sat)): 0.25V (at specific collector/base current conditions)
️· Cutoff Currents: IEBO = 0.2 nA, ICBO = 0.2 nA (very low leakage)
️· Output Capacitance (COBO): 2 pF
️· Frequency Response (fT): 200 MHz
️· Noise Figure (NF): 3 dB (at specified conditions)

3. Absolute Maximum Ratings

️· Storage Temperature: -65°C to +200°C
️· Junction Operating Temperature: -55°C to +150°C
️· Power Dissipation (One Side): 250 mW
️· Power Dissipation (Both Sides): 500 mW
️· Derating (One Side): 2.3 mW/°C
️· Derating (Both Sides): 4.3 mW/°C
️· Collector Current: 10 mA
️· Base-Emitter Voltage: 6.2V (Maximum reverse voltage)

4. Important Notes & Warnings

️· Absolute Maximum Ratings: These are *limits*. Operating outside them can damage the transistor.
️· Reverse Voltage Limitation: The reverse base-emitter voltage must not exceed 6.2V to prevent damage.

5. Contact Information

️· For package and die dimensions, contact Micross Components:
- Email: chipcomponents@micross.com
- Website: www.micross.com/distribution.aspx