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Part No.	LS302
Manufacturer	MICROSS
Size	277 Kbytes
Pages	1 page
Description	Linear Systems High Voltage Super-Beta Monolithic Dual NPN

Datasheet Summary with AI

LS302 - Dual NPN Bipolar Transistor

Description: This is a dual NPN bipolar transistor designed for applications requiring matched characteristics.

Key Features:

️· Very High Gain: hFE ≥ 1000 @ 1µA
️· Tight VBE Matching: VBE1 – VBE2 = 0.2 mV (typical)
️· Low Output Capacitance: COBO ≤ 2.0pF
️· High ft (Transition Frequency): 100 MHz
️· Matched Characteristics: Specifically designed for applications needing closely matched transistor behavior.

Absolute Maximum Ratings:

️· Storage Temperature: -65°C to +200°C
️· Junction Temperature: -55°C to +150°C
️· Continuous Power Dissipation (One Side): 250mW
️· Continuous Power Dissipation (Both Sides): 500mW
️· Linear Derating Factor (One Side): 2.3 mW/°C
️· Linear Derating Factor (Both Sides): 4.3 mW/°C
️· Collector Current: 5mA
️· Reverse Base-Emitter Voltage: 6.2V

Electrical Characteristics (Typical @ 25°C unless otherwise noted):

️· VBE1 – VBE2: 0.2 mV (typical)
️· Δ(VBE1–VBE2) / ΔT: 1 mV/°C
️· BVCBO: 35V
️· BVCEO: 35V
️· BVEBO: 6.2V
️· VCE(sat): 0.5V
️· ICBO: 100 pA
️· COBO: 2 pF
️· fT: 100 MHz
️· NF: 3 dB (at specific test conditions)

Package Options:

️· P-DIP (standard)
️· Bare Die (available upon request)

Important Notes:

️· Observe absolute maximum ratings to prevent device damage.
️· The reverse base-emitter voltage should not exceed 6.2V.