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2SC3663 Datasheet with Chat AI
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  • # Example questions: ➢ What are the three quality grades assigned to nec devices, and which grade is standard for this transistor?
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  • Part No.2SC3663
    ManufacturerNEC
    Size110 Kbytes
    Pages8 pages
    DescriptionNPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
    Datasheet Summary with AI

    1. General Information:

    ️· Part Number: 2SC3663
    ️· Manufacturer: NEC
    ️· Document Number: P10406EJ1V0DS00 (1st edition)
    ️· Publication Date: August 1997
    ️· Type: NPN Silicon Transistor
    ️· Disclaimer: NEC doesn’t assume responsibility for errors in the document, nor liability for patent infringements. No license is granted for NEC's intellectual property. Standard safety measures are required when using the device. Anti-radioactive design is not implemented.
    ️· Quality Grades: Devices are categorized as Standard, Special, or Specific (dependent on customer quality assurance program). Application guidelines are provided for each grade.

    2. Electrical Characteristics (Key Parameters - See detailed tables in the full document):

    ️· DC Current Gain (hFE): 50 to 250 (at VCE = 1V, IC = 250µA, pulse)
    ️· Collector Cut-off Current (ICBO): ≤ 0.1µA (Vcb=5V, IE=0)
    ️· Emitter Cut-off Current (IEBO): ≤ 0.1µA (Veb=1V, Ic=0)
    ️· Gain-Bandwidth Product (fT): ≥ 4 GHz (Vce=1V, Ic=1mA)
    ️· Insertion Power Gain: 4.0 to 6.5 dB (Vce=1V, Ic=1mA, f=1GHz)
    ️· Maximum Available Gain (MAG): ≤ 12.5 dB (Vce=1V, Ic=1mA, f=1GHz)
    ️· Noise Figure (NF): 3.0 to 4.5 dB (Vce=1V, Ic=250µA, f=1.0 GHz)
    ️· Associated Power Gain (GA): 3.5 dB (Vce=1V, Ic=250µA, f=1.0 GHz)
    ️· Collector Capacitance (Cob): 0.4 to 0.6 pF (Vcb=1V, IE=0, f=1.0 MHz)

    3. Typical Characteristics (Graphs & Data):

    ️· Gain Bandwidth Product vs. Collector Current: Shows the relationship between fT and Ic.
    ️· Insertion Power Gain vs. Frequency: Graphically illustrates power gain over a frequency range.
    ️· Noise Figure and Power Gain at Optimum NF vs. Collector Current: Shows how Noise Figure and GA change with Ic.

    4. Marking:

    ️· Marking Code: R62 (corresponds to hFE classification)

    5. Important Notes & Warnings:

    ️· Safety Precautions: Customers are advised to incorporate safety measures in designs using this device.
    ️· Radioactive Design: The device is *not* designed with anti-radioactive properties.
    ️· Application Considerations: Users must choose the appropriate quality grade for the intended application.
    ️· Consult NEC: Contact NEC's sales representatives for non-standard applications.

    In essence, the 2SC3663 is a high-frequency, low-noise NPN transistor suitable for applications requiring good gain and performance at high frequencies.

    1. General Information:

    ️· Part Number: 2SC3663
    ️· Manufacturer: NEC
    ️· Document Number: P10406EJ1V0DS00 (1st edition)
    ️· Publication Date: August 1997
    ️· Type: NPN Silicon Transistor
    ️· Disclaimer: NEC doesn’t assume responsibility for errors in the document, nor liability for patent infringements. No license is granted for NEC's intellectual property. Standard safety measures are required when using the device. Anti-radioactive design is not implemented.
    ️· Quality Grades: Devices are categorized as Standard, Special, or Specific (dependent on customer quality assurance program). Application guidelines are provided for each grade.

    2. Electrical Characteristics (Key Parameters - See detailed tables in the full document):

    ️· DC Current Gain (hFE): 50 to 250 (at VCE = 1V, IC = 250µA, pulse)
    ️· Collector Cut-off Current (ICBO): ≤ 0.1µA (Vcb=5V, IE=0)
    ️· Emitter Cut-off Current (IEBO): ≤ 0.1µA (Veb=1V, Ic=0)
    ️· Gain-Bandwidth Product (fT): ≥ 4 GHz (Vce=1V, Ic=1mA)
    ️· Insertion Power Gain: 4.0 to 6.5 dB (Vce=1V, Ic=1mA, f=1GHz)
    ️· Maximum Available Gain (MAG): ≤ 12.5 dB (Vce=1V, Ic=1mA, f=1GHz)
    ️· Noise Figure (NF): 3.0 to 4.5 dB (Vce=1V, Ic=250µA, f=1.0 GHz)
    ️· Associated Power Gain (GA): 3.5 dB (Vce=1V, Ic=250µA, f=1.0 GHz)
    ️· Collector Capacitance (Cob): 0.4 to 0.6 pF (Vcb=1V, IE=0, f=1.0 MHz)

    3. Typical Characteristics (Graphs & Data):

    ️· Gain Bandwidth Product vs. Collector Current: Shows the relationship between fT and Ic.
    ️· Insertion Power Gain vs. Frequency: Graphically illustrates power gain over a frequency range.
    ️· Noise Figure and Power Gain at Optimum NF vs. Collector Current: Shows how Noise Figure and GA change with Ic.

    4. Marking:

    ️· Marking Code: R62 (corresponds to hFE classification)

    5. Important Notes & Warnings:

    ️· Safety Precautions: Customers are advised to incorporate safety measures in designs using this device.
    ️· Radioactive Design: The device is *not* designed with anti-radioactive properties.
    ️· Application Considerations: Users must choose the appropriate quality grade for the intended application.
    ️· Consult NEC: Contact NEC's sales representatives for non-standard applications.

    In essence, the 2SC3663 is a high-frequency, low-noise NPN transistor suitable for applications requiring good gain and performance at high frequencies.

    Part No.2SC3663
    ManufacturerNEC
    Size110 Kbytes
    Pages8 pages
    DescriptionNPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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