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BFS17L Datasheet with Chat AI

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➢ What is the typical transition frequency (ft) of the bfs17l when the collector current (ic) is 0ma and the collector-emitter voltage (vce) is 5.0v?

Part No.	BFS17L
Manufacturer	DIODES
Size	50 Kbytes
Pages	2 pages
Description	SOT23 NPN SILICON PLANAR RF TRANSISTORS

Datasheet Summary with AI

️· Collector Cut-Off Current (ICBO): 10-10 nA (at VCB=10V, IE=0)
️· Static Forward Current Transfer Ratio (hFE):
- BFS17L: 25-100 (at IC=2.0mA, VCE=1.0V)
- BFS17H: 70-200 (at IC=2.0mA, VCE=1.0V)
- 20-125 (at IC=25mA, VCE=1.0V)
️· Transition Frequency (fT):
- 1.0-1.3 GHz (at IC=2.0mA, VCE=5.0V, f=500MHz)
- 1.0-1.3 GHz (at IC=25mA, VCE=5.0V, f=500MHz)
️· Feedback Capacitance (C re): 0.85 pF (at IC=2.0mA, VCE=5V, f=1MHz)
️· Output Capacitance (C obo): 1.5 pF (at VCB=10V, f=1MHz)
️· Input Capacitance (C ibo): 2.0 pF (at VEB=0.5V, f=1MHz)
️· Noise Figure (N): 4.5 dB (at IC=2.0mA, VCE=5.0V, RS=50 Ω, f=500MHz)
️· Intermodulation Distortion: -45 dB (at IC=10mA, VCE=6.0V, RL=37.5 Ω, Tamb=25°C)

## Typical Characteristics

️· Frequency (fT) vs. Collector Current (IC) graphs
️· Current Gain (hFE) vs. Collector Current (IC) graphs
️· Feedback Capacitance (C re) vs. Collector-Emitter Voltage (VCE) graph

# BFS17L/BFS17H NPN RF Transistors

## General Information

️· Type: NPN Silicon Planar RF Transistors
️· Part Markings: BFS17L - E1L, BFS17H - E1H
️· Package: SOT23

## Absolute Maximum Ratings

️· Collector-Base Voltage (V CBO): 25 V
️· Collector-Emitter Voltage (V CEO): 15 V
️· Emitter-Base Voltage (V EBO): 2.5 V
️· Peak Pulse Current (I CM): 50 mA
️· Continuous Collector Current (I C): 25 mA
️· Power Dissipation (P tot): 330 mW
️· Operating/Storage Temperature Range (T j:Tstg): -55 to +150 °C

## Electrical Characteristics (Tamb = 25°C)

️· Collector Cut-Off Current (ICBO): 10-10 nA (at VCB=10V, IE=0)
️· Static Forward Current Transfer Ratio (hFE):
- BFS17L: 25-100 (at IC=2.0mA, VCE=1.0V)
- BFS17H: 70-200 (at IC=2.0mA, VCE=1.0V)
- 20-125 (at IC=25mA, VCE=1.0V)
️· Transition Frequency (fT):
- 1.0-1.3 GHz (at IC=2.0mA, VCE=5.0V, f=500MHz)
- 1.0-1.3 GHz (at IC=25mA, VCE=5.0V, f=500MHz)
️· Feedback Capacitance (C re): 0.85 pF (at IC=2.0mA, VCE=5V, f=1MHz)
️· Output Capacitance (C obo): 1.5 pF (at VCB=10V, f=1MHz)
️· Input Capacitance (C ibo): 2.0 pF (at VEB=0.5V, f=1MHz)
️· Noise Figure (N): 4.5 dB (at IC=2.0mA, VCE=5.0V, RS=50 Ω, f=500MHz)
️· Intermodulation Distortion: -45 dB (at IC=10mA, VCE=6.0V, RL=37.5 Ω, Tamb=25°C)

## Typical Characteristics

️· Frequency (fT) vs. Collector Current (IC) graphs
️· Current Gain (hFE) vs. Collector Current (IC) graphs
️· Feedback Capacitance (C re) vs. Collector-Emitter Voltage (VCE) graph