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2SC5353 Datasheet with Chat AI
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  • # Example questions: ➢ What is the maximum collector current (ic) specified for the 2sc5353?
    ➢ What is the maximum collector-base voltage (vcbo) that the 2sc5353 can withstand?
    ➢ What is the typical storage time (tstg) for the 2sc5353 transistor?

    • Part No.2SC5353
    ManufacturerUTC
    Size266 Kbytes
    Pages4 pages
    DescriptionHIGH VOLTAGE NPN TRANSISTOR
    Datasheet Summary with AI

    # 2SC5353 NPN SILICON TRANSISTOR

    ## DESCRIPTION
    ️· High voltage NPN transistor for switching regulator and high-speed DC-DC converter applications.

    ## FEATURES
    ️· Excellent switching times: tR = 0.7μs (MAX), tF = 0.5μs (MAX)
    ️· High collector-base breakdown voltage: VCEO = 700V

    ## ORDERING INFORMATION
    ️· Packages: TO-126, TO-126C, TO-220, TO-220F
    ️· Pin Assignment: Base (B), Collector (C), Emitter (E)
    ️· Available Options: Lead Free & Halogen Free

    ## ABSOLUTE MAXIMUM RATINGS (Tc = 25℃)
    ️· Collector-Base Voltage (V<sub>CBO</sub>): 900V
    ️· Collector-Emitter Voltage (V<sub>CEO</sub>): 700V
    ️· Emitter-Base Voltage (V<sub>EBO</sub>): 7V
    ️· Collector Current (I<sub>C</sub>): 3A
    ️· Pulse Collector Current (I<sub>CP</sub>): 5A

    ️· Base Current (I<sub>B</sub>): 1A
    ️· Collector Power Dissipation (P<sub>D</sub>): 20-25W (depending on package)
    ️· Junction Temperature (T<sub>J</sub>): +150℃
    ️· Storage Temperature (T<sub>STG</sub>): -40 ~ +150℃

    ## ELECTRICAL CHARACTERISTICS (Tc = 25℃)
    ️· Collector-Base Breakdown Voltage (BVCBO): 900V
    ️· Collector-Emitter Breakdown Voltage (BVCEO): 700V
    ️· Collector Cut-off Current (ICBO): 100µA
    ️· Emitter Cut-off Current (IEBO): 10µA
    ️· DC Current Gain (hFE1): 10 (VCE=5V, IC=1mA)
    ️· DC Current Gain (hFE2): 15 (VCE=5V, IC=0.15A)
    ️· Collector-Emitter Saturation Voltage (VCE(SAT)): 1.0V (IC=1.2A, IB=0.24A)
    ️· Base-Emitter Saturation Voltage (VBE(SAT)): 1.3V (IC=1.2A, IB=0.24A)
    ️· Rise Time (tR): 0.7µs
    ️· Storage Time (tSTG): 4.0µs
    ️· Fall Time (tF): 0.5µs

    # 2SC5353 NPN SILICON TRANSISTOR

    ## DESCRIPTION
    ️· High voltage NPN transistor for switching regulator and high-speed DC-DC converter applications.

    ## FEATURES
    ️· Excellent switching times: tR = 0.7μs (MAX), tF = 0.5μs (MAX)
    ️· High collector-base breakdown voltage: VCEO = 700V

    ## ORDERING INFORMATION
    ️· Packages: TO-126, TO-126C, TO-220, TO-220F
    ️· Pin Assignment: Base (B), Collector (C), Emitter (E)
    ️· Available Options: Lead Free & Halogen Free

    ## ABSOLUTE MAXIMUM RATINGS (Tc = 25℃)
    ️· Collector-Base Voltage (V<sub>CBO</sub>): 900V
    ️· Collector-Emitter Voltage (V<sub>CEO</sub>): 700V
    ️· Emitter-Base Voltage (V<sub>EBO</sub>): 7V
    ️· Collector Current (I<sub>C</sub>): 3A
    ️· Pulse Collector Current (I<sub>CP</sub>): 5A
    ️· Base Current (I<sub>B</sub>): 1A
    ️· Collector Power Dissipation (P<sub>D</sub>): 20-25W (depending on package)
    ️· Junction Temperature (T<sub>J</sub>): +150℃
    ️· Storage Temperature (T<sub>STG</sub>): -40 ~ +150℃

    ## ELECTRICAL CHARACTERISTICS (Tc = 25℃)
    ️· Collector-Base Breakdown Voltage (BVCBO): 900V
    ️· Collector-Emitter Breakdown Voltage (BVCEO): 700V
    ️· Collector Cut-off Current (ICBO): 100µA
    ️· Emitter Cut-off Current (IEBO): 10µA
    ️· DC Current Gain (hFE1): 10 (VCE=5V, IC=1mA)
    ️· DC Current Gain (hFE2): 15 (VCE=5V, IC=0.15A)
    ️· Collector-Emitter Saturation Voltage (VCE(SAT)): 1.0V (IC=1.2A, IB=0.24A)
    ️· Base-Emitter Saturation Voltage (VBE(SAT)): 1.3V (IC=1.2A, IB=0.24A)
    ️· Rise Time (tR): 0.7µs
    ️· Storage Time (tSTG): 4.0µs
    ️· Fall Time (tF): 0.5µs

    Part No.2SC5353
    ManufacturerUTC
    Size266 Kbytes
    Pages4 pages
    DescriptionHIGH VOLTAGE NPN TRANSISTOR
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