# Silicon Schottky Diode BAS 40W

## General Description
· General-purpose diodes for high-speed switching, circuit protection, voltage clamping, and high-level detecting/mixing.

## Product Variants

Type	Ordering Code (tape & reel)	Pin Configuration	Marking	Package
BAS 40-04W	Q62702-A1065	A1	44s	SOT-323
BAS 40-05W	Q62702-A1066	A1	45s	SOT-323
BAS 40-06W	Q62702-A1067	C1	46s	SOT-323

## Maximum Ratings
· Reverse Voltage (VR): 40 V
· Forward Current (IF): 120 mA
· Surge Forward Current (IFSM): 200 mA (t ≤ 10 ms)
· Total Power Dissipation (Ptot): 250 mW (TS ≤ 106 °C)
· Junction Temperature (Tj): 150 °C
· Operating Temperature Range (Top): -55 to +150 °C
· Storage Temperature Range (Tstg): -55 to +150 °C

## Thermal Resistance
· Junction-Ambient (Rth JA): ≤ 395 K/W
· Junction-Soldering Point (Rth JS): ≤ 175 K/W

## Electrical Characteristics (TA = 25°C)
· Breakdown Voltage (VBR, IBR = 10 µA): 40 V
· Forward Voltage (VF)
- IF = 1 mA: 250 mV (typ)
- IF = 10 mA: 350 mV (typ)
- IF = 15 mA: 600 mV (typ)
· Reverse Current (IR)
- VR = 30 V: ≤ 1 µA
- VR = 40 V: ≤ 10 µA
· Diode Capacitance (CT, VR = 0 V, f = 1 MHz): ≤ 35 pF
· Charge Carrier Lifetime (IF = 25 mA): ≥ 10 ps
· Differential Forward Resistance (IF = 10 mA, f = 10 kHz): ≤ 10 Ω
· Series Inductance (LS): ≤ 2 nH

## Graphs (refer to datasheet for visual representation)
· Forward current vs. Forward voltage (IF = f(VF))
· Diode capacitance vs. Reverse voltage (CT = f(VR))
· Reverse current vs. Reverse voltage (IR = f(VR))
· Differential forward resistance vs. Forward Current (RF = f(IF))
· Forward current vs. Ambient/Soldering temperature (IF = f(TA;TS*))
· Permissible pulse load vs. pulse duration (IFmax / IFDC = f(tp))
· Permissible load vs. pulse duration (RthJS = f(tp))