# isc Silicon NPN Power Transistor BUW41B

## Description

· High Voltage
· High Switching Speed
· Low Collector Saturation Voltage

## Applications

· Offline power supplies
· High voltage inverters
· Switching regulators

## Absolute Maximum Ratings (Ta=25℃)

· VCEV (VBE=-1.5V): 650V
· VCEX (VBE=-1.5V): 450V
· VCER (RBE=100Ω): 450V
· VCEO: 400V
· VEBO: 8V
· IC (Continuous): 8A
· ICM (Peak): 10A
· IB (Continuous): 4A
· PC (@TC=25℃): 100W
· Tj: 150℃
· Tstg: -65~150℃

## Thermal Characteristics

· Rth j-c: 1.25 ℃/W
· Rth j-a: 70 ℃/W

## Electrical Characteristics (TC=25℃)

· VCEO(SUS) (IC=0.2A, IB=0): 400V
· VCE(sat)-1 (IC=5A, IB=1A): 1.0V
· VCE(sat)-2 (IC=8A, IB=4A): 2.0V
· VBE(sat) (IC=5A, IB=1A): 1.6V
· ICEV (VCE=650V, VBE=-1.5V): 0.1mA
· IEBO (VEB=8V, IC=0): 2.0mA
· hFE (IC=5A, VCE=3V): 10-40
· COB (IE=0, VCB=10V, ftest=0.1MHz): 50-300 pF
· fT (IC=0.2A, VCE=10V): 15-60 MHz

## Switching Times (Resistive Load)

· td (Delay Time): 0.1 μs
· tr (Rise Time): 0.5 μs
· ts (Storage Time): 2.5 μs
· tf (Fall Time): 0.4 μs

## Website

· www.iscsemi.cn