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Hello, Please ask a question about IXFG55N50 Datasheet
# Example questions:
➢ What is the typical rds(on) value when the gate-source voltage (vgs) is 10v?
➢ What is the maximum junction temperature (tj) specified for this mosfet?
➢ What is the maximum drain-to-source voltage (vdss) this mosfet can withstand?
| Part No. | IXFG55N50 |
| Manufacturer | IXYS |
| Size | 100 Kbytes |
| Pages | 2 pages |
| Description | HiPerFET Power MOSFETs ISOPLUS247 |
1. Device Information:
️· Device Type: MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
️· Series: IXYS MOSFET
️· Part Number (Implied): Likely related to IXFK55N50 (see "See IXFK55N50 data sheet for characteristic curves.")
️· Package: Likely related to ISO264 outline. (See "ISO264 Outline" diagram/reference)
️· Electrical Characteristics (Key Values):
- V<sub>DSS</sub>: 500V
- V<sub>GS(th)</sub>: 2.5 - 4.5V
- R<sub>DS(on)</sub>: 90 mΩ (at a specified current, ID=IT, and VGS=10V – exact conditions not explicitly stated)
️· Physical Characteristics:
- Weight: 5g
- TL (from case): 1.6 mm
2. Operating Conditions/Limits:
️· Junction Temperature (T<sub>J</sub>): -40°C to +150°C
️· Maximum Junction Temperature (T<sub>JM</sub>): 150°C
️· Storage Temperature (T<sub>stg</sub>): -40°C to +150°C
️· Isolation Voltage (VISOL): 2500V (RMS, 50/60 Hz)
️· dV/dt Limit: ≤ 5 V/ns (with some conditions relating to IDM and a specified voltage)
️· di/dt Limit: ≤ 100 A/µs
3. Features & Applications:
️· Key Features: Direct-Copper-Bonded substrate, High power dissipation, Isolated mounting surface, Electrical isolation, Low drain to tab capacitance, Rugged polysilicon gate, Unclamped Inductive Switching (UIS) rating, Fast intrinsic Rectifier
️· Typical Applications: DC-DC converters, battery chargers, switched-mode power supplies, DC choppers, AC motor control.
️· Advantages: Easy assembly, space savings, high power density.
4. Related Information:
️· Patents: Numerous U.S. patents cover the technology used in this MOSFET (listed in the text).
️· Reference: Refer to the IXFK55N50 datasheet for more detailed characteristic curves.
️· Mounting Torque: 0.4/6 Nm/lb-in
1. Device Information:
️· Device Type: MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
️· Series: IXYS MOSFET
️· Part Number (Implied): Likely related to IXFK55N50 (see "See IXFK55N50 data sheet for characteristic curves.")
️· Package: Likely related to ISO264 outline. (See "ISO264 Outline" diagram/reference)
️· Electrical Characteristics (Key Values):
- V<sub>DSS</sub>: 500V
- V<sub>GS(th)</sub>: 2.5 - 4.5V
- R<sub>DS(on)</sub>: 90 mΩ (at a specified current, ID=IT, and VGS=10V – exact conditions not explicitly stated)
️· Physical Characteristics:
- Weight: 5g
- TL (from case): 1.6 mm
2. Operating Conditions/Limits:
️· Junction Temperature (T<sub>J</sub>): -40°C to +150°C
️· Maximum Junction Temperature (T<sub>JM</sub>): 150°C
️· Storage Temperature (T<sub>stg</sub>): -40°C to +150°C
️· Isolation Voltage (VISOL): 2500V (RMS, 50/60 Hz)
️· dV/dt Limit: ≤ 5 V/ns (with some conditions relating to IDM and a specified voltage)
️· di/dt Limit: ≤ 100 A/µs
3. Features & Applications:
️· Key Features: Direct-Copper-Bonded substrate, High power dissipation, Isolated mounting surface, Electrical isolation, Low drain to tab capacitance, Rugged polysilicon gate, Unclamped Inductive Switching (UIS) rating, Fast intrinsic Rectifier
️· Typical Applications: DC-DC converters, battery chargers, switched-mode power supplies, DC choppers, AC motor control.
️· Advantages: Easy assembly, space savings, high power density.
4. Related Information:
️· Patents: Numerous U.S. patents cover the technology used in this MOSFET (listed in the text).
️· Reference: Refer to the IXFK55N50 datasheet for more detailed characteristic curves.
️· Mounting Torque: 0.4/6 Nm/lb-in
| Part No. | IXFG55N50 |
| Manufacturer | IXYS |
| Size | 100 Kbytes |
| Pages | 2 pages |
| Description | HiPerFET Power MOSFETs ISOPLUS247 |
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