# STP3020L Power MOSFET

## Overview
N-Channel Power MOSFET designed for high current, high speed switching applications. Utilizes STMicroelectronics' strip-based process for high packing density, low on-resistance, and robust avalanche characteristics.

## Key Features
· V DSS: 30V
· R DS(on): 0.019Ω (typical)
· ID (Continuous): 40A (at Tc = 25°C), 28A (at Tc = 100°C)
· IDM (Pulsed): 160A
· Low Gate Charge: Suitable for fast switching
· Applications: Solenoid/relay drivers, motor control, DC-AC converters, automotive (injection, ABS, airbags, lamps).

## Electrical Characteristics (Tcase = 25°C)
· V(BR)DSS: 30V
· V GS(th): 2.5V (typical)
· ID(on): 40A (at VGS = 10V)
· gfs (Forward Transconductance): 520S
· Q g (Total Gate Charge): 21nC

## Thermal Characteristics
· R thjc (Junction-Case Thermal Resistance): 1.875 °C/W
· R thja (Junction-Ambient Thermal Resistance): 62.5 °C/W
· Maximum Lead Temperature for Soldering: 300°C

## Switching Characteristics (Test Conditions: VDD=15V, ID=19A, RG=4.7Ω, Resistive Load)
· td(on) (Turn-on Delay Time): 28ns
· tr (Rise Time): 220ns
· td(off) (Turn-off Delay Time): 45ns
· tf (Fall Time): 35ns

## Package Information
· Package Type: TO-220
· Detailed Mechanical Dimensions: Provided in datasheet figures and table.

## Absolute Maximum Ratings
· V DS (Drain-Source Voltage): 30V
· V GS (Gate-Source Voltage): ±20V
· P tot (Total Dissipation): 80W (at Tc = 25°C), derating factor of 0.53W/°C
· Tstg (Storage Temperature): -65 to +175°C
· Tj (Junction Temperature): 175°C