# SD5000 NPN Silicon Transistor

## General Description
· NPN Silicon Transistor for linear applications at 1000 MHz
· Designed for Telecommunications, Radar, ECM, Space, and other systems
· Features gold metallization and polysilicon site ballasting for reliability

## Absolute Maximum Ratings (Tcase = 25°C)
· VCBO (Collector-Base Voltage): 50 V
· VCES (Collector-Emitter Voltage): 50 V
· VEBO (Emitter-Base Voltage): 3.5 V
· IC (Device Current): 1.0 A
· PDISS (Power Dissipation): 7.0 W
· TJ (Junction Temperature): +200 °C
· TSTG (Storage Temperature): -65 to +150 °C
· RTH(j-c) (Junction-Case Thermal Resistance): 25 °C/W

## Electrical Specifications (Tcase = 25°C)
· Pout (1dB f = 1 GHz, VCC = 20 V, IC = 220 mA): 1.5 W min.
· GP (f= 1 GHz, VCC = 20 V, IC = 220 mA): 9.5 dB min.
· VSWR (f = 1 GHz, VCC = 20 V, IC = 220 mA): 25:1 max.
· Cob (f= 1 MHz, VCB = 20 V): 4.0 pF max.
· BV CBO (IC = 10mA): 50 V
· BV EBO (IE = 5mA): 3.5 V
· BV CES (IC = 10mA): 50 V
· BV CEO (IC = 5mA): 23 V
· ICBO (VCB = 28V): 0.2 mA max.
· hFE (VCE = 5V, IC = 100mA): 18-200

## Pin Connection
1. Collector
2. Emitter
3. Base
4. Emitter

## Impedance Data (1000 MHz)
· ZIN: 4.0 + j 3.3 Ω
· ZCL: 20.8 + j 33.3 Ω

## Test Circuit Components
· B1, B2: Ferrite Beads
· C1, C2: 120 pF Chip Capacitors
· C3: .4 - 2.5 pF Johanson Capacitor
· C4: .8 - 8 pF Johanson Capacitor
· C5, C6, C7, C8: 220 pF Chip Capacitors
· C9, C10: 1000 pF Chip Capacitors
· C11: .1 µF Capacitor
· C12, C13: 15,000 pF EMI Filter
· L1, L2: 5 Turn Choke (Wire Diameter .025”, I.D. 0.125”)
· Substrate: Er = 10.2, H = .050”, 1oz. Copper

## Package Information
· Reference Drawing Number: 12-0122