# isc N-Channel MOSFET Transistor STW54NM65N

## Features

· Drain Current (ID): 50A @ TC=25℃
· Drain-Source Voltage (VDSS): 650V (Min)
· Static Drain-Source On-Resistance (RDS(on)): 0.065Ω (Max) @ VGS=10V

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	650	V
VGS	Gate-Source Voltage-Continuous	±25	V
ID	Drain Current-Continuous	50	A
IDM	Drain Current-Single Pulse	200	A
PD	Total Dissipation @TC=25℃	350	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	0.36	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID=1.0mA	650	--	--	V
IDSS	Zero Gate Voltage Drain Current	VDS=650V; VGS= 0V	--	--	1	μA
IGSS	Gate-Body Leakage Current	VGS= ±20V;VDS= 0 V	--	--	±100	nA
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID=0.25mA	2.0	--	4.0	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 25A	--	--	0.065	Ω
VSD	Forward On-Voltage	IS= 50A; VGS= 0V	--	--	1.3	V

## Disclaimer

· Intended for general electronic equipment.
· Not designed for specialized quality/reliability or hazardous/aerospace/medical applications.
· ISC disclaims all liability.
· Reproduction prohibited without permission.