# SDR1AHF & SDR1AHFSMS Series Hyper Fast Rectifier

## Features
· Hyper Fast Recovery: 35 nsec maximum
· PIV to 1200 Volts
· Hermetically Sealed
· Void Free Construction
· For High Efficiency Applications
· Single Chip Construction
· Low Reverse Leakage
· TX, TXV, S Level screening Available

## Maximum Ratings
· Peak Repetitive Reverse Voltage (VRRM): 50 - 1200 Volts (depending on model)
· Average Rectified Forward Current (Io): 1.0 Amps
· Peak Surge Current (IFSM): 25 Amps
· Operating & Storage Temperature (TOP & TSTG): -65 to +175 °C
· Thermal Resistance (RθJE): 28-35 °C/W

## Electrical Characteristics

· Instantaneous Forward Voltage Drop (VF): 3.3 - 3.6 VDC (depending on model & temperature)
· Reverse Leakage Current (IR): 5 µA (25°C), 200 µA (100°C)
· Reverse Recovery Time (tRR): 35 nsec
· Junction Capacitance (CJ): 20 pF

## Case Outlines & Dimensions
· Axial:
- A: 0.150"
- B: 0.190"
- C: 0.027" - 0.033"
- D: 0.950"
· SMS:
- A: 0.134" - 0.153"
- B: 0.200" - 0.280"
- C: 0.022" - 0.028"
- D: 0.002"