# isc N-Channel MOSFET Transistor IXFA16N50P3

## Features

· Drain Current: I D = 16A @ T C = 25℃
· Drain-Source Voltage: V DSS = 500V (Min)
· Static Drain-Source On-Resistance: R DS(on) = 0.36Ω (Max) @ V GS = 10V
· 100% avalanche tested
· Minimum lot-to-lot variations

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	500	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous	16	A
IDM	Drain Current-Single Pluse	40	A
PD	Total Dissipation @TC=25℃	330	W
TJ	Max. Operating Junction Temperature	-55~150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	0.38	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID= 1mA	500	--	V
VGS(th)	Gate Threshold Voltage	VDS= 10V; ID= 2.5mA	3.0	5.0	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 8.0A	--	0.36	Ω
IGSS	Gate-Body Leakage Current	VGS= ±30V;VDS= 0	--	±0.1	uA
IDSS	Zero Gate Voltage Drain Current	VDS= 500V; VGS= 0	--	15.0	uA
VSD	Forward On-Voltage	IS= 16A; VGS= 0	--	1.4	V

## Description

· Motor drive, DC-DC converter, power switch and solenoid drive applications.

## Notice

· ISC website: [www.iscsemi.com](http://www.iscsemi.com)
· ISC and iscsemi are registered trademarks.
· Products are not designed for use in equipment requiring specialized quality or reliability, or hazardous environments, aerospace or medical fields.