# FPD3000 2W Power PHEMT

## Description
The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT) featuring a 0.25 µm by 3000 µm Schottky barrier gate. It’s designed for reliable high-power applications and is available in a P100 ceramic or SOT89 plastic package. Typical applications include SATCOM uplink transmitters, PCS/Cellular amplifiers, and medium-haul digital radio transmitters.

## Features
️· Linear Output Power: 32.5 dBm at 12 GHz
️· Power Gain: 6.5 dB at 12 GHz
️· Maximum Stable Gain: 8 dB at 12 GHz
️· Output IP3: 42 dBm
️· Power-Added Efficiency: 30%

## Electrical Specifications (at 22°C)
️· P1dB: 31.5 - 32.5 dBm
️· SSG: 7.0 - 8.0 dB
️· G1dB: 6.0 - 6.5 dB
️· PAE: 30%
️· IP3: 42-44 dBm
️· IDSS: 750-1100 mA
️· IMAX: 1.5 A
️· GM: 800 mS
️· IGSO: 10 µA
️· VP: 1.0 V
️· VBDGS: 12.0 - 14.0 V
️· VBDGD: 14.5 - 16.0 V
️· θJC: 20 °C/W

## Absolute Maximum Ratings
️· VDS: -3 to 8 V
️· VGS: 0 to -3 V
️· IDS: IDSS (defined by manufacturing)
️· IG: 25 mA
️· PIN: 600 mW
️· TCH: 175 °C
️· TSTG: -40 to 150 °C
️· PTOT: 7.3 W
️· ESD precautions: Class 1A per ESD-STM5.1-1998

## Handling and Assembly
️· Die attach: Gold/tin eutectic solder under nitrogen atmosphere (280-290°C for 1 minute)
️· Wire bonding: Thermo-compression wedge bonding with 0.7 or 1.0 mil gold wire (250-260°C)
️· Complete design data (S-parameters, noise data, large-signal models) is available on the Filtronic website.