1. General Parameters

️· Frequency: 1.8 GHz (Reference frequency for measurements)

2. Power and Gain Characteristics

️· P1dB (Power at 1dB Compression): 32-33 dBm
️· G1dB (Gain at 1dB Compression): 12.5 - 14.0 dB
️· MSG (Maximum Stable Gain): 20 dB

3. Power Handling & Current

️· IDSS (Saturated Drain-Source Current): 975 - 1325 mA (At VDS = 1.3V, VGS = 0V)
️· IMAX (Maximum Drain-Source Current): 1800 mA (At VDS = 1.3V, VGS ≈ +1V)

4. Transconductance (gm)

️· gm (Transconductance): 1200 mS (at VDS = 1.3V, VGS = 0V)

5. Leakage Current & Breakdown

️· IGSO (Gate-Source Leakage Current): 35-85 µA (at VGS = -3V)
️· |VBDGS| (Gate-Source Breakdown Voltage): 14-16 V
️· |VBDGD| (Gate-Drain Breakdown Voltage): 20-22 V

6. Pinch-Off Voltage

️· |VP| (Pinch-Off Voltage): 0.7-1.4 V (at VDS = 1.3 V, IDS = 4 mA)

7. Thermal Characteristics

️· ΘCC (Thermal Resistance, Channel to Case): 20 °C/W

Important Notes/Assumptions:

️· Test Conditions: The values are specific to the 1.8 GHz test frequency and the conditions stated for each measurement (e.g., voltage and current levels).
️· Device Type: Likely a MOSFET, but the exact type (N-channel or P-channel) isn't stated.
️· Datasheet Completeness: This appears to be an excerpt. A complete datasheet would contain more details (e.g., pinout, bias circuitry, typical application circuits).