BF254 / New Jersey Semi-Conductor Products, Inc. - bảng dữ liệu(PDF) Chat AI

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Part No.	BF254
Manufacturer	NJSEMI
Size	120 Kbytes
Pages	2 pages
Description	NPN Silicon RF Transistors

Datasheet Summary with AI

# BF254 / BF255 NPN Silicon RF Transistors

## General Information

· Type: NPN Silicon RF Transistors
· Applications: AM and FM stages
· Marking: —
· Package: TO-92
· Manufacturers: NJ Semi-Conductors
· Contact Information:
- Telephone: (973) 376-2922 / (212)227-6005
- FAX: (973) 376-8960

## Maximum Ratings

· Collector-emitter voltage (VCEO): 20V (BF254), 30V (BF255)
· Collector-base voltage (VCES): 30V
· Emitter-base voltage (VEBO): 5V
· Collector current (Ic): 30mA
· Total power dissipation (PM): 250mW (TA = 45°C)
· Junction temperature (Ti): 150°C
· Storage temperature range: -65°C to +150°C
· Thermal Resistance (Junction-ambient): 5420 K/W

## Electrical Characteristics (TA = 25°C)

DC Characteristics

· DC Current Gain (hFE):
- Ic = 1mA, VCE = 10V
- BF254: 65 (typical)
- BF255: 35 (typical)
· Base-emitter voltage (VBE): 0.68V
AC Characteristics

· Transition frequency (fT):
- Ic = 1mA, VCE = 10V, f = 100MHz
- BF254: 260 MHz
- BF255: 220 MHz
· Collector-base capacitance (Cob): 1 MHz
- BF254: 10.7 PF
- BF255: 10.7 PF
· Collector-emitter capacitance (Co): 1 MHz
- BF254: 3.8 PF
- BF255: 3.8 PF
· Noise figure (F):
- Ic = 1mA, Vce = 10V, f = 1 MHz,£.= 1.5mSi>
- BF254: 1.2 dB
- BF255: 0.6 dB
- /=100MHz,s.= 10mSi>
- BF254: 3.8 dB
- BF255: 0.6 dB

Y Parameters (typical values, Ic = 10V)
· Common emitter and base configurations listed with values.