BDT29BF / New Jersey Semi-Conductor Products, Inc. - bảng dữ liệu(PDF) Chat AI

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Part No.	BDT29BF
Manufacturer	NJSEMI
Size	134 Kbytes
Pages	2 pages
Description	Silicon NPN Power Transistors

Datasheet Summary with AI

# BDT29F/AF/BF/CF/DF Silicon NPN Power Transistors

## Description

️· DC Current Gain: hFE = 40 (Min) @ Ic = 0.4A
️· Collector-Emitter Sustaining Voltage: 40V (BDT29F), 60V (BDT29AF), 80V (BDT29BF), 100V (BDT29CF), 120V (BDT29DF)
️· Complementary to BDT30F/AF/BF/CF/DF

## Applications

️· Audio output stages
️· General purpose amplifiers
️· High-speed switching applications

## Absolute Maximum Ratings (Ta=25°C)

️· VCBO: 80-160V
️· VCEO: 40-120V
️· VEBO: 5-120V
️· Ic: 0.4-3A
️· Icm: 1-1.5A
️· IB: 0.4A
️· PC: 19W
️· Junction Temperature: 150°C
️· Storage Temperature Range: -65 to 150°C

## Thermal Characteristics

️· Rth j-c: 9.17 °C/W
️· Rth j-a: 55 °C/W

## Electrical Characteristics (Tc=25°C unless otherwise specified)

️· VcEO(SUS): 40-120V
️· VcE(sat): 0.7V (typical)
️· VsE(on): 0.3V (typical)
️· ICES: 0.1 - 0.2 mA
️· ICED: 0.2 mA
️· IEBO: 15 mA
️· hFE-1: 3 (minimum)
️· hFE-2: 75
️· fT: MHz
️· ton: 0.3 µs
️· toff: 1.0 ms