# BU120 Silicon NPN Power Transistor

## Description & Applications

· Designed for horizontal deflection output stages in CTV receivers, high-voltage switching, and industrial applications.
· Collector-Emitter Sustaining Voltage: 200V (minimum).

## Absolute Maximum Ratings (Ta=25°C)

· VCBO (Collector-Emitter Voltage): 400V
· VCEO (Collector-Emitter Voltage): 200V
· VEBO (Emitter-Base Voltage): 7V
· Ic (Collector Current - Continuous): 10A
· ICM (Collector Current - Peak): 15A
· IB (Base Current - Continuous): 3.0A
· PC (Collector Power Dissipation): 100W (at TC=25°C)
· Tj (Junction Temperature): 200°C
· Tstg (Storage Temperature Range): -65°C to 200°C

## Thermal Characteristics

· Rth j-c (Thermal Resistance, Junction to Case): 1.75 °C/W

## Electrical Characteristics (Tc=25°C unless otherwise specified)

· VcEO(SUS) (Collector-Emitter Sustaining Voltage): 200V (min), 300V (max)
· V(BR)CBO (Collector-Base Breakdown Voltage): 400V
· Vce(sat) (Collector-Emitter Saturation Voltage): 30V (max)
· Vse(sat) (Base-Emitter Saturation Voltage): 6V (max)
· Icbo (Collector Cutoff Current): 0.1mA (max)
· IEBO (Emitter Cutoff Current): 0.1mA (max)
· hFE (DC Current Gain): 120 (min)
· fr (Current-Gain - Bandwidth Product): 120 MHz

## Package Dimensions (in mm)

· A: 39.00
· B: 25.30 / 26.67
· D: 0.90
· E: 1
· G: 10.9
· H: 5.4
· K: 11.40 / 13.50
· L: 16.75 / 17.05
· N: 19.40 / 19.62
· Q: 4.00
· U: 30.00
· V: 4.30 / 4.50