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IXFK24N100 Datasheet with Chat AI
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    Hello, Please ask a question about IXFK24N100 Datasheet

  • # Example questions: ➢ What package type is this mosfet available in, and what are its primary mounting options?
    ➢ What is the maximum source-drain diode forward current (is) and repetitive pulse current (ism)?
    ➢ What is the typical qg(on) value for this mosfet?

  • Part No.IXFK24N100
    ManufacturerIXYS
    Size99 Kbytes
    Pages2 pages
    DescriptionHiPerRF Power MOSFETs
    Datasheet Summary with AI

    Okay, I'll summarize the information provided in the document. This is a datasheet for an IXYS MOSFET. Here's a breakdown of the key details:

    1. Device Type and General Information:

    ️· Type: N-channel MOSFET
    ️· Family: Designed for high-frequency DC-DC converters, switched-mode power supplies, DC choppers, pulse generation, and laser drivers.
    ️· Features:
    - Low gate resistance (due to double process)
    - UIS (Unclamped Inductive Switching) rated – Important for handling inductive loads
    - Fast intrinsic rectifier – Improves efficiency
    - PLUS 247 package (clip or spring mounting)
    ️· Patents: IXYS MOSFETs are covered by multiple U.S. patents (listed at the bottom).

    2. Key Electrical Characteristics (Highlights - many more in the datasheet):

    ️· Voltage: (VDSS) – Specific values are not readily available from the summary table.
    ️· Current: (ID) – Specific values are not readily available from the summary table.
    ️· Gate Charge: Qg(on) = 195 nC, Qgs = 40 nC, Qgd = 100 nC
    ️· Input Capacitance: Ciss = 6600 pF, Coss = 760 pF, Crss = 230 pF
    ️· Switching Times: td(on) = 22 ns, tr = 18 ns, td(off) = 52 ns, tf = 11 ns

    ️· Source-Drain Diode Characteristics:
    - Forward Voltage (VSD) = 1.5 V
    - Forward Current (IS) = 24 A, (ISM) = 96A.
    - Reverse Recovery Time (trr) = 250 ns

    3. Package and Dimensions:

    ️· Package Type: PLUS 247
    ️· The datasheet provides detailed dimensional information for the PLUS 247 package, including measurements in millimeters and inches, including dimensions for: A, A1, A2, b, b1, b2, c, D, E, e, J, K, L, L1, P, Q, Q1, R, R1, S, T.

    4. Applications & Advantages

    ️· Applications: DC-DC converters, switched-mode power supplies, DC choppers, pulse generation, laser drivers
    ️· Advantages: Space-saving design, easy drive, high power density



    Important Note: This is a *summary*. The full datasheet contains significantly more information, including detailed electrical characteristics, thermal properties, reliability data, and test conditions.

    1. Device Type and General Information:

    ️· Type: N-channel MOSFET
    ️· Family: Designed for high-frequency DC-DC converters, switched-mode power supplies, DC choppers, pulse generation, and laser drivers.
    ️· Features:
    - Low gate resistance (due to double process)
    - UIS (Unclamped Inductive Switching) rated – Important for handling inductive loads
    - Fast intrinsic rectifier – Improves efficiency
    - PLUS 247 package (clip or spring mounting)
    ️· Patents: IXYS MOSFETs are covered by multiple U.S. patents (listed at the bottom).

    2. Key Electrical Characteristics (Highlights - many more in the datasheet):

    ️· Voltage: (VDSS) – Specific values are not readily available from the summary table.
    ️· Current: (ID) – Specific values are not readily available from the summary table.
    ️· Gate Charge: Qg(on) = 195 nC, Qgs = 40 nC, Qgd = 100 nC
    ️· Input Capacitance: Ciss = 6600 pF, Coss = 760 pF, Crss = 230 pF
    ️· Switching Times: td(on) = 22 ns, tr = 18 ns, td(off) = 52 ns, tf = 11 ns
    ️· Source-Drain Diode Characteristics:
    - Forward Voltage (VSD) = 1.5 V
    - Forward Current (IS) = 24 A, (ISM) = 96A.
    - Reverse Recovery Time (trr) = 250 ns

    3. Package and Dimensions:

    ️· Package Type: PLUS 247
    ️· The datasheet provides detailed dimensional information for the PLUS 247 package, including measurements in millimeters and inches, including dimensions for: A, A1, A2, b, b1, b2, c, D, E, e, J, K, L, L1, P, Q, Q1, R, R1, S, T.

    4. Applications & Advantages

    ️· Applications: DC-DC converters, switched-mode power supplies, DC choppers, pulse generation, laser drivers
    ️· Advantages: Space-saving design, easy drive, high power density



    Important Note: This is a *summary*. The full datasheet contains significantly more information, including detailed electrical characteristics, thermal properties, reliability data, and test conditions.

    Part No.IXFK24N100
    ManufacturerIXYS
    Size99 Kbytes
    Pages2 pages
    DescriptionHiPerRF Power MOSFETs
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